Fabrication of optical planar and channel waveguides in doped by He-ion implantation
Borca, C.N. and Zäh, F. and Schnider, F. and Salathé, R.P. and Pollnau, M. and Moretti, P. (2005) Fabrication of optical planar and channel waveguides in doped by He-ion implantation. In: Scientific program of the European Materials Research Society Meeting, 31 May - 3 June 2005, Strasbourg, France (pp. Paper C-VI.01).
Restricted to UT campus only : Request a copy
|Abstract:||Light ion implantation can be regarded as a universal tool for fabricating low-loss waveguide structures in optically active oxide materials. We have fabricated planar optical waveguides in :(2%) crystals by implanting He+ ions at 1.5 MeV, with doses ranging from 1 to 3x10^16 ions/cm2. An optical barrier with a decreased effective refractive index was created at the end of the ions' tracks, situated approximately 3.5 μm below the surface. The change in refractive index with respect to the bulk value and its stability to thermal treatment were investigated by dark m-line spectroscopy. |
Surface channel waveguides were obtained by writing sidewalls into the planar guiding layer by implantation through a slit. The sidewalls were produced by keeping the ion energy fixed and varying the incident angle of implantation. Channel waveguides of 5-μm width and 4-μm depth were obtained in the regions between the implanted sidewalls. Beam-propagation parameters were measured by investigating the output profile of end-coupled, fundamental-mode laser light at 980 nm. The results of loss measurements will be presented at the conference.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/62302|
|Export this item as:||BibTeX|
Daily downloads in the past month
Monthly downloads in the past 12 months
Repository Staff Only: item control page
Metis ID: 248175