Engineering of dislocation-loops for light emission from silicon diodes


Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and LeMinh, P. and Schmitz, J. (2008) Engineering of dislocation-loops for light emission from silicon diodes. Solid state phenomena, 131-13 . pp. 303-308. ISSN 1012-0394

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Abstract:Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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