Engineering of dislocation-loops for light emission from silicon diodes

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Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and Le Minh, P. and Schmitz, J. (2008) Engineering of dislocation-loops for light emission from silicon diodes. Solid State Phenomena, 131-13 . pp. 303-308. ISSN 1012-0394

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Abstract:Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.
Item Type:Article
Additional information:ID: 194.95.141.200-17/09/07
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62157
Official URL:http://www.scientific.net/3-908451-43-4/4.html
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