Dimensional scaling effects on transport properties of p-i-n diodes


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Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, T. and Wiel van der, W.G. and Schmitz, J. (2007) Dimensional scaling effects on transport properties of p-i-n diodes. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands.

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Abstract:Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we characterized lateral p-i-n structures using thin silicon on insulator (SOI) layers of varying dimension. With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also studied different ways to fabricate silicon lines/fins.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/62111
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Metis ID: 245934