Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD


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Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. In: Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 29 - 30 Nov 2007, Veldhoven, The Netherlands.

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Abstract:Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. We found that the films contained a high amount of positive oxide charge and exhibited large leakage currents at 1-2 Pa, while films with a lower positive charge and much lower leakage currents were grown at 6 Pa. The deposition rate was ~4.5 nm/min at 1-2 Pa and ~3.5 nm/min at 6 Pa. The lower growth-rate at 6 Pa could be ascribed to the formation of denser films, as well as to the changing plasma and surface chemistry.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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