Experimental investigation of anisotropy in isotropic silicon etching

Share/Save/Bookmark

Svetovoy, V. and Berenschot, J.W. and Elwenspoek, M.C. (2007) Experimental investigation of anisotropy in isotropic silicon etching. Journal of micromechanics and microengineering, 17 (11). pp. 2344-2351. ISSN 0960-1317

[img] PDF
Restricted to UT campus only
: Request a copy
758kB
Abstract:Isotropic etching of silicon in HF-based solutions exhibits some level of anisotropy. We study this anisotropy in detail by etching silicon via circular mask openings for wafers of different orientations. The in-plane shape of the cavities is analyzed with high precision as a function of the etching time and opening size. Fourier expansion of the cavity shape is used to analyze different anisotropy components in relation to the crystal symmetry. It is found that the anisotropy pattern is in agreement with the crystal symmetry with a precision better than 0.4%. The relative anisotropy does not depend on the etching time and increases with the reduction of the opening size. For radii of mask holes a > 4 µm all the Fourier coefficients demonstrate a universal behavior increasing in absolute value linearly with a-1/3. The smaller holes exhibit saturation of these coefficients. The maximal anisotropy is about 9% for both (1 0 0) and (1 1 0) wafers but only 1.5% for (1 1 1).
Item Type:Article
Copyright:© IOP Publishing
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/62098
Official URL:http://dx.doi.org/10.1088/0960-1317/17/11/023
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 245918