Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect. Applied physics letters, 91 (20). p. 201113. ISSN 0003-6951

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Abstract:	Spectral positions of dislocation-related luminescence (DRL) peaks from dislocation loops located close to a p-n junction in silicon were shifted by carrier injection level. We suppose that the excitonic transition energies of DRL were reduced by an effective electric field at dislocation sites due to quadratic Stark effect (QSE). The field results from built-in junction field reduced by carrier injection. A constant of the shift, obtained from fitting of the data with QSE equation, was 0.0186 meV/(kV/cm)2. The effect can explain the diversity of DRL spectra in silicon and may allow tuning and modulation of DRL for future photonic applications.
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/62070
Official URL:	http://dx.doi.org/10.1063/1.2813024
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