Wideband CMOS low noise amplifier including an active balun


Share/Save/Bookmark

Blaakmeer, S.C. and Klumperink, E.A.M. and Leenaerts, D.M.W. and Nauta, B. (2007) Wideband CMOS low noise amplifier including an active balun. In: ProRISC 2007, 18th Annual Workshop on Circuits, Systems and Signal Processing, 29-30 November 2007, Veldhoven, the Netherlands.

[img] PDF
Restricted to UT campus only
: Request a copy
441kB
Abstract:An inductorless LNA with active balun is proposed for multi-standard radio applications between 100MHz and 6GHz [1]. It exploits a combination of a common-gate (CG) stage and an common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a Noise Figure (NF) close to or below 3dB can be achieved, while good linearity is possible if the CS-stage is carefully optimized. Moreover, good output balancing can be achieved. The best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<−14dB, IIP3 = 0dBm IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling, distortion canceling and a well balanced output.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/61954
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 245737