Wideband CMOS low noise amplifier including an active balun


Blaakmeer, S.C. and Klumperink, E.A.M. and Leenaerts, D.M.W. and Nauta, B. (2007) Wideband CMOS low noise amplifier including an active balun. In: ProRISC 2007, 18th Annual Workshop on Circuits, Systems and Signal Processing, 29-30 November 2007, Veldhoven, the Netherlands.

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Abstract:An inductorless LNA with active balun is proposed for multi-standard radio applications between 100MHz and 6GHz [1]. It exploits a combination of a common-gate (CG) stage and an common-source (CS) stage with replica biasing to maximize balanced operation, while simultaneously canceling the noise and distortion of the CG-stage. In this way, a Noise Figure (NF) close to or below 3dB can be achieved, while good linearity is possible if the CS-stage is carefully optimized. Moreover, good output balancing can be achieved. The best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<−14dB, IIP3 = 0dBm IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling, distortion canceling and a well balanced output.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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