Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

Steen van der, J.-L.P.J. and Hueting, R.J.E. and Smit, G.D.J. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs. IEEE Electron Device Letters, 28 (9). pp. 821-824. ISSN 0741-3106

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Abstract:	The effect of quantum confinement in thin siliconon-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the first time. By comparing temperature-dependent subthreshold characteristics of p-type devices with different silicon layer thicknesses, the offset in the valence band edge induced by spatial carrier confinement in these very thin silicon layers wasmeasured electrically. Changes in the band structure are important for future CMOS devices such as FinFETs
Item Type:	Article
Copyright:	© 2007 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/61908
Official URL:	http://dx.doi.org/10.1109/LED.2007.903390
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Metis ID: 241902