Influence of dislocation loops on the near infrared light emission from silicon diodes

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Hoang, Tu and Holleman, Jisk and Le Minh, Puong and Schmitz, Jurriaan and Mchedlidze, Teimuraz and Arguirov, Tzanimir and Kittler, Martin (2007) Influence of dislocation loops on the near infrared light emission from silicon diodes. IEEE Transactions on Electron Devices, 54 (8). pp. 1860-1866. ISSN 0018-9383

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Abstract:The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 μm. The so-called D1 line at 1.5 μm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits
Item Type:Article
Copyright:© 2007 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/61858
Official URL:http://dx.doi.org/10.1109/TED.2007.901072
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