The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs


Hurley, Paul K. and Negara, Adi and Hemert, Tom van and Cherkaoui, Karim (2009) The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs. ECS Transactions, 19 (2). pp. 379-391. ISSN 1938-5862

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Abstract:In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8x1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the density of oxide charge in the HfO2/SiOx gate stack. The temperature dependence of the electron mobility (50 K to 350 K) and hole mobility (218 K to 373 K) is determined before and after the various levels of oxide and interface degradation to allow an experimental determination of the Coulomb scattering term (alpha) as a function of temperature for various oxide charge levels. Based on the temperature dependant alpha determined for a 3nm HfO2 gate thickness n channel MOSFET, an empirical model has been developed which accurately predicts the measured electron mobility for the 2.4, 2.0 and 1.6nm HfO2 gate thicknesses.
Item Type:Article
Additional information:215th ECS Meeting, May 24 - May 29, 2009 , San Francisco, CA Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 Editor(s): R. Ekwal Sah, J. Zhang, J. Deen, J. Yota, A. Toriumi
Copyright:© 2009 The Electrochemical Society
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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