The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs

Hurley, Paul K. and Negara, Adi and Hemert van, Tom and Cherkaoui, Karim (2009) The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs. ECS Transactions, 19 (2). pp. 379-391. ISSN 1938-5862

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Abstract:	In this work we will provide the results of an investigation into electron and hole mobility at high inversion charge density (6 to 8x1012 cm-2) in TiN/HfO2/SiOx/Si MOSFETs. We examine the influence of oxide charge on carrier mobility by using temperature bias stress to deliberately increase the density of oxide charge in the HfO2/SiOx gate stack. The temperature dependence of the electron mobility (50 K to 350 K) and hole mobility (218 K to 373 K) is determined before and after the various levels of oxide and interface degradation to allow an experimental determination of the Coulomb scattering term (alpha) as a function of temperature for various oxide charge levels. Based on the temperature dependant alpha determined for a 3nm HfO2 gate thickness n channel MOSFET, an empirical model has been developed which accurately predicts the measured electron mobility for the 2.4, 2.0 and 1.6nm HfO2 gate thicknesses.
Item Type:	Article
Copyright:	© 2009 The Electrochemical Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/61706
Official URL:	http://dx.doi.org/10.1149/1.3122103
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