Low-Temperature SiO2 Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet

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Kovalgin, Alexey Y. and Isai, Gratiela and Holleman, Jisk and Schmitz, Jurriaan (2008) Low-Temperature SiO2 Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet. Journal of the Electrochemical Society, 155 (2). G21-G28. ISSN 0013-4651

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Abstract:As the semiconductor industry strives toward wafer postprocessing and three-dimensional integration, a demand has arisen for high-quality thin films deposited at temperatures below 400°C. In this work, we present SiO2 films deposited at near room temperature, using a multipolar electron cyclotron resonance (ECR) plasma source, introducing the SiH4 gas by using a high-velocity jet of silane diluted in helium. The electrical properties were studied under varying deposition parameters, such as gas flow rate, deposition pressure, and postdeposition and postmetallization annealing processes. At a low pressure, low SiH4 flow and high helium flow, device-quality SiO2 layers were obtained after a deposition combined with a 5 min postmetallization annealing at 400°C. These layers exhibited a refractive index of 1.46, an O/Si ratio of 2, an interface trap density in the order of 1011 cm−2 eV−1, an oxide charge density down to 1010 cm−2, and a breakdown field up to 11 MV/cm. They are thus suitable as a gate dielectric in a thin-film transistor.
Item Type:Article
Copyright:The Electrochemical Society
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/61694
Official URL:http://dx.doi.org/10.1149/1.2815627
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