On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient

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Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. and Schmitz, J. (2005) On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient. Journal of the Electrochemical Society, 152 (9). F133-F137. ISSN 0013-4651

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Abstract:This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950 °C. A considerable and constant difference of 18% in oxidation rate is found between the two oxidizing species. Modeling of the obtained oxidation data with the Deal-Grove, Reisman, and Wolters models results in poor fits. The extracted activation energy suggests the presence of a rapid initial oxidation regime for the first 10 nm, not incorporated in the investigated models
Item Type:Article
Copyright:© 2005 The Electrochemical Society
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/61687
Official URL:http://dx.doi.org/10.1149/1.1992388
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