On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient

Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. and Schmitz, J. (2005) On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient. Journal of the Electrochemical Society, 152 (9). F133-F137. ISSN 0013-4651

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Abstract:	This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ultradiluted ambient of H2O or D2O in the temperature range 750-950 °C. A considerable and constant difference of 18% in oxidation rate is found between the two oxidizing species. Modeling of the obtained oxidation data with the Deal-Grove, Reisman, and Wolters models results in poor fits. The extracted activation energy suggests the presence of a rapid initial oxidation regime for the first 10 nm, not incorporated in the investigated models
Item Type:	Article
Copyright:	© 2005 The Electrochemical Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/61687
Official URL:	http://dx.doi.org/10.1149/1.1992388
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