Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization

Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization. Journal of the Electrochemical Society, 152 (7). G522-G527. ISSN 0013-4651

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Abstract:	An atomic layer deposition process to grow tungsten nitride films was established at 350 degrees C with a pulse sequence of WF6/NH3/C2H4/SiH4/NH3. The film composition was determined with Rutherford backscattering as W1.5N, being a mixture of WN and W2N phases. The growth rate was similar to 1 x 10(15) W atom/cm(2) per cycle (monolayer of W2N or WN). The films with a thickness of 16 nm showed root-mean-square roughness as low as 0.43-0.76 nm. The resistivity of the films was stable after 50 cycles at a value of 480 mu Omega cm. Results of four-point probe sheet resistance measurements at elevated temperature demonstrated that our films are nonreactive with Cu at least up to 500 degrees C. Results of I-V measurements of p(+)/n diodes before and after heat-treatment in (N-2 + 5% H-2) ambient at 400 degrees C for 30 min confirmed excellent diffusion barrier properties of the films.
Item Type:	Article
Copyright:	The Electrochemical Society
Faculty:	Science and Technology (TNW) Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Mesoscale Chemical Systems (MCS) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/61686
Official URL:	http://dx.doi.org/10.1149/1.1928171
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