Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4

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Holleman, J. and Kuiper, A.E.T. and Verweij, J.F. (1993) Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4. Journal of the Electrochemical Society, 140 (6). pp. 1717-1722. ISSN 0013-4651

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Abstract:A Langmuir-Hinshelwood growth-rate equation is presented for the germanium-silicon (GeSi) alloy deposition fromGeH4 and SiH4 assuming dissociative chemisorption on a heterogeneous GeSi surface. Model parameters for the depositionkinetics have been extracted from measurements. The fit for the bond-energy of hydrogen to a germanium surface site is30 kJ mol–1, lower compared to that of hydrogen to a silicon site. We found to a good approximation the GeSi compositionof the alloy to be independent of the temperature. Moreover, the GeSi is polycrystalline down to the lowest depositiontemperature we used, ie., 450°C
Item Type:Article
Copyright:© 1993 The Electrochemical Society
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/61615
Official URL:http://dx.doi.org/10.1149/1.2221630
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