In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) In Situ Growth Rate Measurement of Selective LPCVD of Tungsten. Journal of the Electrochemical Society, 138 (4). pp. 989-993. ISSN 0013-4651

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Abstract:	The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.
Item Type:	Article
Copyright:	The Electrochemical Society
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/61608
Official URL:	http://dx.doi.org/10.1149/1.2085758
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Metis ID: 112027