In Situ Growth Rate Measurement of Selective LPCVD of Tungsten

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Holleman, J. and Hasper, A. and Middelhoek, J. (1991) In Situ Growth Rate Measurement of Selective LPCVD of Tungsten. Journal of the Electrochemical Society, 138 (4). pp. 989-993. ISSN 0013-4651

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Abstract:The reflectance measurement during the selective deposition of W on Si covered with an insulator grating is proven tobe a convenient method to monitor the W deposition. The reflectance change during deposition allows the in situ measurementof the deposition rate. The influence of surface roughening due to either the W growth or an etching pretreatmentof the wafer is modeled, as well as the effect of selectivity loss and lateral overgrowth.
Item Type:Article
Copyright:The Electrochemical Society
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Link to this item:http://purl.utwente.nl/publications/61608
Official URL:http://dx.doi.org/10.1149/1.2085758
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Metis ID: 112027