A Reflectometric Study of the Reaction between Si and WF6 during W-LPCVD on Si and of the Renucleation during the H2 Reduction of WF6

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Holleman, J. and Hasper, A. and Middelhoek, J. (1991) A Reflectometric Study of the Reaction between Si and WF6 during W-LPCVD on Si and of the Renucleation during the H2 Reduction of WF6. Journal of the Electrochemical Society, 138 (3). pp. 783-788. ISSN 0013-4651

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Abstract:The formation of W through the reduction of WF6 by Si is monitored in situ using a wavelength adjustable reflectometer.The reflectance-time relation can be understood and modeled by assuming island growth and a statistical distributionof the island thickness. The model is supported by SEM and Auger observations. The effect of surface layers like nativeoxides or a plasma treatment on the inhomogeneous Si consumption by the reaction between Si and WF6 (gouging) and itseffect on the reflectance-time relation are understood. The model is also applicable in the case of renucleation during theH2 reduction of WF6. A renucleation step consists of the deposition of Si from SiH4 followed by the Si consumption byWF6. A renucleation step reduces the surface roughing which occurs during the H2 reduction process.
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Copyright:The Electrochemical Society
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Link to this item:http://purl.utwente.nl/publications/61606
Official URL:http://dx.doi.org/10.1149/1.2085676
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