Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers

Share/Save/Bookmark

Middelhoek, J. and Holleman, J. (1974) Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers. Journal of the Electrochemical Society, 121 (1). pp. 132-137. ISSN 0013-4651

open access
[img]
Preview
PDF
569kB
Abstract:The diffusion of phosphorus into silicon from doped oxide layers, deposited at low temperatures, has been studied in order to achieve reproducible impurity distributions with surface concentrations varying from 5 × 1015 to 1018 atoms/cm3. Special attention has been given to the differences arising from indiffusion in an N2 or in an O2 ambient. The dependence on the temperature of the diffusion coefficients of phosphorus in silicon and in silicon dioxide is determined at a surface concentration of 5 × 1016 atoms/cm3.
Item Type:Article
Copyright:The Electrochemical Society
Research Group:
Link to this item:http://purl.utwente.nl/publications/61591
Official URL:http://dx.doi.org/10.1149/1.2396806
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page