Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions

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Vedyayev, A. and Ryzhanova, N. and Vlutters, R. and Dieny, B. (1999) Effect of interfacial scattering on the magnetoresistance of magnetic tunnel junctions. Europhysics Letters, 46 (6). pp. 808-814. ISSN 0295-5075

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Abstract:In theories of electron tunneling between metallic layers, one fundamental question remains: which is the relevant density of states which determines the tunnel current through the barrier? In this letter, the influence of electron scattering at the metal/oxide interface in magnetic tunnel junctions on the tunnel current is addressed from a theoretical point of view. Two contributions to the tunnel current and to the magnetoresistance of these junctions are obtained: one from specular transmission through the barrier which is related to the one-dimensional density of states next to the metal/oxide interface, the other from tunneling assisted by interfacial scattering which depends both on the one-dimensional and three-dimensional density of states. The effect of spin-flip scattering on the impurities is discussed as well.
Item Type:Article
Copyright:© 1999 Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/61307
Official URL:http://dx.doi.org/10.1209/epl/i1999-00336-3
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Metis ID: 111923