CaB6: a new semiconducting material for spin electronics


Tromp, H.J. and Gelderen, P. van and Kelly, P.J. and Brocks, G. and Bobbert, P.A. (2001) CaB6: a new semiconducting material for spin electronics. Physical review letters, 87 (1). 016401. ISSN 0031-9007

[img] PDF - Published Version
Restricted to UT campus only
: Request a copy
Abstract:Ferromagnetism was recently observed at unexpectedly high temperatures in La-doped CaB6. The starting point of all theoretical proposals to explain this observation is a semimetallic electronic structure calculated for CaB6 within the local density approximation. Here we report the results of parameter-free quasiparticle calculations of the single-particle excitation spectrum which show that CaB6 is not a semimetal but a semiconductor with a band gap of 0.8±0.1 eV. Magnetism in LaxCa1-xB6 occurs just on the metallic side of a Mott transition in the La-induced impurity band.
Item Type:Article
Copyright:© 2001 American Physical Society
Science and Technology (TNW)
Research Group:
Link to this item:
Official URL:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 128760