Perpendicular Hot Electron Spin-Valve Effect in a New Magnetic Field Sensor: The Spin-Valve Transistor

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Monsma, D.J. and Lodder, J.C. and Popma, Th.J.A. and Dieny, B. (1995) Perpendicular Hot Electron Spin-Valve Effect in a New Magnetic Field Sensor: The Spin-Valve Transistor. Physical Review Letters, 74 (26). pp. 5260-5263. ISSN 0031-9007

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Abstract:A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (Co/Cu)4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor structure allows the investigation of energy resolved perpendicular transport properties, and in particular spin-dependent scattering of hot electrons in transition-metal as well as rare-earth-based multilayers.
Item Type:Article
Copyright:© 1995 The American Physical Society
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/61218
Official URL:http://dx.doi.org/10.1103/PhysRevLett.74.5260
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Metis ID: 111860