Why monatomic steps on Si(001) are always rough

Zandvliet, H.J.W. and Wormeester, H. and Wentink, D.J. and Silfhout van, A. and Elswijk, H.B. (1993) Why monatomic steps on Si(001) are always rough. Physical Review Letters, 70 (14). pp. 2122-2125. ISSN 0031-9007

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Abstract:	High temperature scanning tunneling microscopy (STM) measurments are performed to study the behavior of monatomic step edges on Si(001) at elevated temperatures. The freeze out temperature Tf, at which the roughness of these step edges is frozen out, is estimated to be well above the intrinsic roughening temperature Tr of the edges. This means that these step edges are always rough at room temperature. The 1D random walk behavior of the step edges, as determined from room temperature STM images, suggests that the step-step interaction is very weak compared to the kink formation energies.
Item Type:	Article
Copyright:	© 1993 American Physical Society
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/61216
Official URL:	http://dx.doi.org/10.1103/PhysRevLett.70.2122
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