Growth Anisotropy and Pattern Formation in Metal Epitaxy

Jorritsma, Louis C. and Bijnagte, Matthieu and Rosenfeld, Georg and Poelsema, Bene (1997) Growth Anisotropy and Pattern Formation in Metal Epitaxy. Physical Review Letters, 78 (5). pp. 911-914. ISSN 0031-9007

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Abstract:	Evidence for the formation of growth induced, ordered checkerboardlike arrangements of mesas has been obtained. These patterns develop on a metal substrate with square symmetry after deposition of tens of monolayers. Its origin is traced back to laterally anisotropic advance rates of island edges in combination with slope selection. The foundation for the mesa arrangement is already laid just after coalescence of the adatom islands in the first monolayer. The results are exemplified in a high resolution surface diffraction study for the growth of Cu on Cu(001).
Item Type:	Article
Copyright:	© 1997 American Physical Society
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/61215
Official URL:	http://dx.doi.org/10.1103/PhysRevLett.78.911
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Metis ID: 128654