Organic layers on silicon result in a unique hybrid fet


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Faber, E.J. and Albers, M. and Smet, L.C.P.M. de and Olthuis, W. and Zuilhof, H. and Sudholter, E.J.R. and Bergveld, P. and Berg, A. van den (2008) Organic layers on silicon result in a unique hybrid fet. In: 22nd International Conference Eurosensors, 7-11 Sept 2008, Dresden, Germany (pp. pp. 848-851).

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Abstract:A Field-Effect Transistor (FET) is presented that combines the conventional lay-out of the silicon substrate (channel and source and drain connections) with a Si-C linked organic gate insulator contacted via an organic, conducting polymer. It is shown that this hybrid device combines the excellent electrical behavior of the silicon substrate and the ease of use and good properties of organic insulators and contacting materials.
Keywords: organic monolayer, FET, conducting polymer
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/60693
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