Energetics of Ni-Induced Vacancy Line Defects on Si(001)

Zandvliet, H.J.W. and Louwsma, H.K. and Hegeman, P.E. and Poelsema, Bene (1995) Energetics of Ni-Induced Vacancy Line Defects on Si(001). Physical Review Letters, 75 (21). pp. 3890-3893. ISSN 0031-9007

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Abstract:	Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.
Item Type:	Article
Copyright:	© 1995 American Physical Society
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/60454
Official URL:	http://dx.doi.org/10.1103/PhysRevLett.75.3890
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