Energetics of Ni-Induced Vacancy Line Defects on Si(001)


Zandvliet, H.J.W. and Louwsma, H.K. and Hegeman, P.E. and Poelsema, Bene (1995) Energetics of Ni-Induced Vacancy Line Defects on Si(001). Physical Review Letters, 75 (21). pp. 3890-3893. ISSN 0031-9007

open access
Abstract:Vacancy line defects on the Si(001) surface induced by small traces of Ni are analyzed with a scanning tunneling microscope. The domain structure that is found obeys the size relation derived by Zeppenfeld et al. [Phys. Rev. Lett. 72, 2737 (1994)] for surface systems with long-range interactions, decaying as L-2. From the thermally induced wandering of the vacancy line defects we extract the strength of this long-range repulsive interaction as well as the short-range attractive interaction between the vacancies in adjacent dimer rows.
Item Type:Article
Copyright:© 1995 American Physical Society
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/60454
Official URL:https://doi.org/10.1103/PhysRevLett.75.3890
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 128918