Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches

Herfst, R.W. and Steeneken, P.G. and Schmitz, J. and Mank, A.J.G. and Gils van, M. (2008) Kelvin probe study of laterally inhomogeneous dielectric charging and charge diffusion in RF MEMS capacitive switches. In: IEEE International Reliability Physics Symposium, IRPS , April 27 - May 1 2008, Phoenix, AZ.

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Abstract:	In this paper we use scanning Kelvin probe microscopy (SKPM) to detect charge in the dielectric of RF MEMS capacitive switches. We observe a laterally inhomogeneous distribution. Laterally inhomogeneous dielectric charging leads to a narrowing of the C-V curve [1], and can lead to stiction of the membrane. The measurements show that trapped charges slowly diffuse, which reduces the inhomogeneity and shows that charge is vertically confined. From these measurements we estimate the lateral diffusion coefficient of trapped charges.
Item Type:	Conference or Workshop Item
Copyright:	© 2008 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/60169
Official URL:	http://dx.doi.org/10.1109/RELPHY.2008.4558935
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