An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology


Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Putten, S. van der and Salm, C. and Schmitz, J. and Smits, S. and Timmermans, J. and Visschers, J.L. (2005) An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. In: SAFE 2005, 8th Annual Workshop on Circuits, Systems and Signal Processing, 17-18 Nov. 2005, Veldhoven, the Netherlands (pp. pp. 139-142).

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Abstract:A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 µm by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs: primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.
Item Type:Conference or Workshop Item
Copyright:© 2005 STW, Technology Foundation
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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