Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes


Faber, E.J. and Smet, L.C.P.M. de and Olthuis, W. and Zuilhof, H. and Sudhölter, E.J.R. and Bergveld, P. and Berg, A. van den (2004) Molecular Tuning of Electrical Properties of Mercury-Insulator-Silicon Diodes. In: SAFE 2004, 7th Annual Workshop on Semiconductor Advances for Future Electronics, 25-26 Nov 2004, Veldhoven, the Netherlands (pp. pp. 630-638).

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Abstract:The influence of silicon surface modification via Si-CnH2n+1 (n=10,12,16,22) devices on p-type (100) silicon is studied by forming MIS (metal-insulatorsemiconductor) diodes via a mercury probe. With the use of current density - voltage (J-V) and capacitance - voltage (C-V) measurements the relevant parameters describing the electrical behavior of these diodes are derived and compared with samples with a native oxide insulator. The insulating properties of these MIS diodes can be precisely tuned by varying the monolayer thickness. Insulating layers with n ≥ 12 show better insulating behavior than native oxide. Despite a comparable thickness of the C16 monolayer as compared to the native oxide layer, the former showed even a tenfold decrease in leakage current. Evaluation of the average tunneling constant (β) of these monolayers reveals 0.45 Å-1. Evaluation of the dielectric constants (εr) gave values of 1.7 ± 0.3 and 2.2 ± 0.4 for n = 16 and 22, respectively, whereas for the fixed charge (Nf) low values of 5.4.1011 and 5.9.1011 cm-2 were found for n = 16 and 22, respectively. The results suggest that Si-C linked monolayers on flat silicon may be a viable, alternative insulator for future electronic devices.
Item Type:Conference or Workshop Item
Copyright:© STW, Technology Foundation 2004
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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