Metal induced gap states on Pt-modified Ge(001) surfaces

Oncel, N. and Beek van, W.J. and Poelsema, B. and Zandvliet, H.J.W. (2007) Metal induced gap states on Pt-modified Ge(001) surfaces. New Journal of Physics, 9 (12). p. 449. ISSN 1367-2630

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Abstract:	Using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) we have studied the electronic properties of a novel, planar, metal semiconductor contact. For this purpose we take advantage of the unique properties of the Pt-modified Ge(001) surface, which consist of coexisting metallic and semiconducting terraces. Spatially resolved STS measurements reveal that the higher lying metallic terraces induce electronic states in the band gap region of the lower lying semiconducting terraces.
Item Type:	Article
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/59276
Official URL:	http://dx.doi.org/10.1088/1367-2630/9/12/449
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Metis ID: 245035