Doping Graphene with Metal Contacts

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Giovannetti, G. and Khomyakov, P.A. and Brocks, G. and Karpan, V.M. and Brink, J. van den and Kelly, P.J. (2008) Doping Graphene with Metal Contacts. Physical Review Letters, 101 (2). 026803. ISSN 0031-9007

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Abstract:Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au, and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by 0:5 eV. At equilibrium separations, the crossover from p-type to n-type doping occurs for a metal work function of 5:4 eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.
Item Type:Article
Copyright:© 2008 American Physical Society
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Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/59243
Official URL:http://dx.doi.org/10.1103/PhysRevLett.101.026803
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Metis ID: 248789