Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature

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Dekkers, J. Matthijn and Rijnders, Guus and Blank, Dave H.A. (2006) Role of Sn doping in In2O3 thin films on polymer substrates by pulsed-laser deposition at room temperature. Applied Physics Letters, 88 (15). ISSN 0003-6951

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Abstract:The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (=4.1×10–4 Ω cm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.
Item Type:Article
Copyright:© 2006 American Institute of Physics
Faculty:
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/59195
Official URL:http://dx.doi.org/10.1063/1.2195096
Publisher URL:http://link.aip.org/link/?APPLAB/88/151908/1
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