Electronically coupled complementary interfaces between perovskite band insulators

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Huijben, Mark and Rijnders, Guus and Blank, Dave H.A. and Bals, Sara and Aert van, Sandra and Verbeeck, Jo and Tendeloo van, Gustaav and Brinkman, Alexander and Hilgenkamp, Hans (2006) Electronically coupled complementary interfaces between perovskite band insulators. Nature Materials, 5 . pp. 556-560. ISSN 1476-1122

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Abstract:Perovskite oxides exhibit a plethora of exceptional
properties, providing the basis for novel concepts of
oxide-electronic devices. The interest in these materials
is even extended by the remarkable characteristics of
their interfaces. Studies on single epitaxial connections
between the wide-bandgap insulators LaAlO3 and SrTiO3
have revealed them to be either high-mobility electron
conductors or insulating, depending on the atomic
stacking sequences. For device applications, as well as
for a basic understanding of the interface conduction
mechanism, it is important to investigate the electronic
coupling of closely spaced complementary interfaces.
Here we report the successful realization of such coupled
interfaces in SrTiO3–LaAlO3 thin-film multilayer structures.
We found a critical separation distance of six perovskite
unit cell layers, corresponding to approximately 23 A˚ ,
below which a decrease of the interface conductivity
and carrier density occurs. Interestingly, the high
carrier mobilities characterizing the separate conducting
interfaces are found to bemaintained in coupled structures
down to subnanometre interface spacing.
Item Type:Article
Copyright:Nature Publishing Group
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/59183
Official URL:http://dx.doi.org/10.1038/433369a
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