Electronically coupled complementary interfaces between perovskite band insulators


Huijben, Mark and Rijnders, Guus and Blank, Dave H.A. and Bals, Sara and Aert, Sandra van and Verbeeck, Jo and Tendeloo, Gustaav van and Brinkman, Alexander and Hilgenkamp, Hans (2006) Electronically coupled complementary interfaces between perovskite band insulators. Nature Materials, 5 . pp. 556-560. ISSN 1476-1122

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:Perovskite oxides exhibit a plethora of exceptional
properties, providing the basis for novel concepts of
oxide-electronic devices. The interest in these materials
is even extended by the remarkable characteristics of
their interfaces. Studies on single epitaxial connections
between the wide-bandgap insulators LaAlO3 and SrTiO3
have revealed them to be either high-mobility electron
conductors or insulating, depending on the atomic
stacking sequences. For device applications, as well as
for a basic understanding of the interface conduction
mechanism, it is important to investigate the electronic
coupling of closely spaced complementary interfaces.
Here we report the successful realization of such coupled
interfaces in SrTiO3–LaAlO3 thin-film multilayer structures.
We found a critical separation distance of six perovskite
unit cell layers, corresponding to approximately 23 A˚ ,
below which a decrease of the interface conductivity
and carrier density occurs. Interestingly, the high
carrier mobilities characterizing the separate conducting
interfaces are found to bemaintained in coupled structures
down to subnanometre interface spacing.
Item Type:Article
Copyright:Nature Publishing Group
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/59183
Official URL:https://doi.org/10.1038/433369a
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 233215