Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers

Park, B.G. and Banerjee, T. and Lodder, J.C. and Jansen, R. (2007) Tunnel Spin Polarization Versus Energy for Clean and Doped Al2O3 Barriers. Physical Review Letters, 99 (21). p. 217206. ISSN 0031-9007

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Abstract:	The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the same device. The intrinsic TSP is reduced below the Fermi level, and more strongly so for tunneling into empty states above the Fermi level. For artificially doped barriers, the low bias TMR decreases due to defect-assisted tunneling. Yet, this mechanism becomes ineffective at large bias, where instead inelastic spin scattering causes a strong TMR decay.
Item Type:	Article
Copyright:	© 2007 American Physical Society
Research Group:	Nano-Electronics (NE)
Link to this item:	http://purl.utwente.nl/publications/58276
Official URL:	http://dx.doi.org/10.1103/PhysRevLett.99.217206
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