Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride


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Hussein, M.G. and Wörhoff, K. and Sengo, G. and Driessen, A. (2005) Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride. In: IEEE/LEOS Benelux Chapter 2005 Annual Symposium, December 1-2, 2005, Mons, Belgium (pp. pp. 101-104).

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Abstract:PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from N2O, 2%SiH4/N2, NH3 and 5%PH3/Ar gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N–H bond concentration of the layers decreased from 3.29×10-21 to 0.45×10-21 cm−3, as the 5%PH3/Ar flow rate increased from 0 to 60 sccm. A simultaneous decrease of O–H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ=1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%PH3/Ar flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ=1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to 1.0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/58220
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