Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride

Hussein, M.G. and Wörhoff, K. and Sengo, G. and Driessen, A. (2005) Influence of phosphorus doping on hydrogen content and optical losses in PECVD silicon oxynitride. In: IEEE/LEOS Benelux Chapter 2005 Annual Symposium, December 1-2, 2005, Mons, Belgium.

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Abstract:	PECVD Phosphorus-doped silicon oxynitride layers (n=1.5) were deposited from N2O, 2%SiH4/N2, NH3 and 5%PH3/Ar gaseous mixtures. Chemical bonds were determined by Fourier transform infrared spectroscopy. N–H bond concentration of the layers decreased from 3.29×10-21 to 0.45×10-21 cm−3, as the 5%PH3/Ar flow rate increased from 0 to 60 sccm. A simultaneous decrease of O–H related bonds was also observed within the same phosphine flow range. The optical loss of slab-type waveguides at λ=1505 nm was found to decrease from 14.1 to 6.2 dB/cm as the 5%PH3/Ar flow rate increased from 0 to 30 sccm, respectively. Moreover, the optical loss values around λ=1400 and 1550 nm were found to decrease from 4.7 to below 0.2 dB/cm and from 1.8 to 1.0 dB/cm respectively. These preliminary results are very promising for applications in low-loss integrated optical devices.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/58220
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