Erbium doped LaF3 nanoparticles incorporated in silicondioxide thin films for active integrated optical applications


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Dekker, R. and Sudarsan, V. and Veggel, F.C.J.M. van and Wörhoff, K. and Driessen, A. (2004) Erbium doped LaF3 nanoparticles incorporated in silicondioxide thin films for active integrated optical applications. In: IEEE/LEOS Benelux Chapter 2004 Annual Symposium : December 2 & 3, 2004, Ghent University. Ghent University, Ghent, Belgium, pp. 295-298. ISBN 9789076546063

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Abstract:We report on the low-cost processing of erbium doped lanthanum trifluoride (LaF3:Er) nanoparticles dispersed in silicondioxide (SiO2) films prepared through the sol-gel method. The influence of particle concentration and annealing temperature on the optical properties and its implications on scattering in the visible wavelength range will be discussed. Uniform, crackfree and low loss films have been obtained by spincoating multiple layers followed by several annealing steps. The lanthanum trifluoride host shields the erbium from the OH-groups present in the silicondioxide, resulting in a higher excited state lifetime of the erbium due to the reduced OH-quenching.
Item Type:Book Section
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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