Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics applications

Hussein, M.G. and Wörhoff, K. and Sengo, G. and Driessen, A. (2004) Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics applications. In: IEEE/LEOS Benelux Chapter 2004 Annual Symposium, December 2-3, 2004, Ghent, Belgium.

Preview

PDF
489Kb

Abstract:	Phosphorus-doped silicon oxynitride layers (n = 1.48 – 1.59) have been deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process from 2% SiH4/N2, N2O, NH3 and PH3 gaseous mixtures. The refractive indices of the deposited layers were found to increase by adding PH3 gas to the process. A slight variation in refractive index was observed in low refractive indices layers due to moisture absorption. Fourier transform infrared spectroscopy showed a significant reduction (40% –100%) in N-H bonds concentration for the P-doped silicon oxynitride, as compared with that for the undoped samples. These results are very promising for applications in low-loss integrated optical devices.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/58210
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 220618