Characterization of thermally treated PECVD SiON layers.


Hussein, M.G. and Wörhoff, K. and Roeloffzen, C.G.H. and Hilderink, L.T.H. and Ridder, R.M. de and Driessen, A. (2001) Characterization of thermally treated PECVD SiON layers. In: H. Thienpont & F. Berghmans & J. Danckaert & L. Desmet (Eds.), IEEE/LEOS Benelux Chapter 2001 Annual Symposium. VUB Press, Brussel. ISBN 9789054872474

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Abstract:PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reduction upon annealing as well as the impact of the elevated temperature on the remaining layer properties has been studied. Annealed waveguides with optical losses as low as 0.2 dB/cm at λ = 1550 nm have been realized.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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