Laser interference lithography with highly accurate interferometric alignment


Share/Save/Bookmark

Soest, Frank J. van and Wolferen, Henk A.G.M. van and Hoekstra, Hugo J.W.M. and Ridder, René M. de and Wörhoff, Kerstin and Lambeck, Paul V. (2003) Laser interference lithography with highly accurate interferometric alignment. In: IEEE/LEOS Benelux Chapter 2003 Annual Symposium, November 20-21, 2003, Enschede, The Netherlands (pp. pp. 269-272).

open access
[img]
Preview
PDF
289kB
Abstract:Three dimensional photonic crystals, e.g. for obtaining the so-called woodpile structure, can, among others, be fabricated by vertical stacking of multiple gratings. One of the requirements for obtaining a full photonic bandgap in such a photonic crystal is an accurate angular and lateral alignment of the successive gratings. Using laser interference lithography at 266 nm wavelength, we fabricated gratings in silicon with periods down to 300 nm. We present a method for aligning further grating exposures with respect to this grating with a 0.001 degree angular and a few nanometers lateral resolution.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/58171
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 214810