An inductorless wideband balun-LNA in 65nm CMOS with balanced output


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Blaakmeer, S.C. and Klumperink, E.A.M. and Nauta, B. and Leenaerts, D.M.W. (2007) An inductorless wideband balun-LNA in 65nm CMOS with balanced output. In: 33rd European Solid State Circuits Conference, ESSCIRC 2007, 11-13 September 2007, München, Germany (pp. pp. 364-367).

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Abstract:An inductorless LNA with active balun is designed for multi-standard radio applications between 100MHz and 6GHz. It exploits a combination of a common gate stage and a common source stage with replica biasing to maximize balanced operation. The NF is designed to be around 3dB by using the noise canceling technique. Its best performance is achieved between 300MHz to 3.5GHz with gain and phase errors below 0.3dB and ±2degrees, 15dB gain, S11<‒14dB, IIP3 = 0dBm and IIP2 higher than +20dBm at a total power consumption of 21mW. The circuit is fabricated in a baseline 65nm CMOS process, with an active area of only 0.01mm2. The circuit simultaneously achieves impedance matching, noise canceling and a well balanced output.
Item Type:Conference or Workshop Item
Copyright:© 2007 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/58155
Official URL:http://dx.doi.org/10.1109/ESSCIRC.2007.4430319
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Metis ID: 245724