Low-Frequency Noise Phenomena in Switched MOSFETs

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Wel van der, Arnoud P. and Klumperink, Eric A.M. and Kolhatkar, Jay S. and Hoekstra, Eric and Snoeij, Martijn F. and Salm, Cora and Wallinga, Hans and Nauta, Bram (2007) Low-Frequency Noise Phenomena in Switched MOSFETs. IEEE Journal of Solid-State Circuits, 42 (3). pp. 540-550. ISSN 0018-9200

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Abstract:In small-area MOSFETs widely used in analog and RF circuit design, low-frequency (LF) noise behavior is increasingly dominated by single-electron effects. In this paper, the authors review the limitations of current compact noise models which do not model such single-electron effects. The authors present measurement results that illustrate typical LF noise behavior in small-area MOSFETs, and a model based on Shockley-Read-Hall statistics to explain the behavior. Finally, the authors treat practical examples that illustrate the relevance of these effects to analog circuit design. To the analog circuit designer, awareness of these single-electron noise phenomena is crucial if optimal circuits are to be designed, especially since the effects can aid in low-noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied
Item Type:Article
Copyright:© 2007 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/58142
Official URL:http://dx.doi.org/10.1109/JSSC.2006.891714
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