Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs

Hueting, R.J.E. and Heringa, Anco (2006) Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs. IEEE Transactions on Electron Devices, 53 (7). pp. 1641-1646. ISSN 0018-9383

Preview

PDF
220Kb

Abstract:	In this work, we analyzed the subthreshold current (I/sub D/) of pocket implanted MOSFETs using extensive device simulations and experimental data. We present an analytical model for the subthreshold current applicable for any type of FET and show that the subthreshold current of nMOSFETs, which is mainly due to diffusion, is determined by the internal two-dimensional hole distribution across the device. This hole distribution is affected by the electric potential of the gate and the doping concentration in the channel. The results obtained allow accurate modelling of the subthreshold current of future generation MOS devices.
Item Type:	Article
Copyright:	© 2006 IEEE Press
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/57675
Official URL:	http://dx.doi.org/10.1109/TED.2006.876284
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 238017