Fabrication and characterization of high-quality uniform and apodized Si/sub 3/N/sub 4/ waveguide gratings using laser interference lithography

Hopman, W.C.L. and Dekker, R. and Yudistira, D. and Engbers, W.F.A. and Hoekstra, H.J.W.M. and Ridder de, R.M. (2006) Fabrication and characterization of high-quality uniform and apodized Si/sub 3/N/sub 4/ waveguide gratings using laser interference lithography. IEEE Photonics Technology Letters, 18 (17). pp. 1041-1135. ISSN 1041-1135

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Abstract:	A method is presented for fabricating high-quality ridge waveguide gratings by combining conventional mask lithography with laser interference lithography. The method, which allows for apodization functions modulating both amplitude and phase of the grating is demonstrated by fabricating a grating that is chirped by width-variation of the grated ridge waveguide. The structure was optically characterized using both an end-fire and an infrared camera setup to measure the transmission and to map and quantify the power scattered out of the grating, respectively. For a uniform grating, we found a Q value of /spl sim/8000 for the resonance peak near the lower wavelength band edge, which was almost completely suppressed after apodization.
Item Type:	Article
Copyright:	© 2006 IEEE Press
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/57671
Official URL:	http://dx.doi.org/10.1109/LPT.2006.881226
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