Specific contact resistance measurements of metal-semiconductor junctions

Stavitski, N. and Dal van, M.J.H. and Wolters, R.A.M. and Kovalgin, A.Y. and Schmitz, J. (2006) Specific contact resistance measurements of metal-semiconductor junctions. In: Microelectronic Test Structures, 2006 IEEE International Conference on.

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Abstract:	Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's transmission line model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides.
Item Type:	Conference or Workshop Item
Copyright:	© 2006 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/57653
Official URL:	http://dx.doi.org/10.1109/ICMTS.2006.1614265
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