Specific contact resistance measurements of metal-semiconductor junctions


Stavitski, N. and Dal, M.J.H. van and Wolters, R.A.M. and Kovalgin, A.Y. and Schmitz, J. (2006) Specific contact resistance measurements of metal-semiconductor junctions. In: Microelectronic Test Structures, 2006 IEEE International Conference on (pp. pp. 13-17).

open access
[img] PDF
Abstract:Our research comprises the manufacturing of test structures to characterize the metal-semiconductor junctions with a number of techniques and materials. An extensive subsequent physical and electrical testing of the junctions is carried out. We present our first results on specific silicide-to-diffusion contact resistance characterization using the known Scott's transmission line model (TLM) and our approach, considering particular geometry, with NiSi and PtSi as the silicides.
Item Type:Conference or Workshop Item
Copyright:© 2006 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/57653
Official URL:https://doi.org/10.1109/ICMTS.2006.1614265
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page