The effect of dislocation loops on the light emission of silicon LEDs

Share/Save/Bookmark

Hoang, T. and LeMinh, P. and Hollleman, J. and Schmitz, J. (2006) The effect of dislocation loops on the light emission of silicon LEDs. IEEE Electron Device Letters, 27 (2). pp. 105-107. ISSN 0741-3106

[img]
Preview
PDF
188Kb
Abstract:Remarkably strong infrared light emission was recently observed from silicon p/sup +/-n diodes. In several publications a causal relation is proposed between the larger-than-expected light intensity and the existence of lattice damage around the junction. In this letter, we present direct experimental evidence that lattice damage is in fact detrimental to the efficiency of light emission of silicon LEDs. The experiments call for a revision of the explanation for strong light emission in this type of devices.
Item Type:Article
Copyright:© 2006 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/57575
Official URL:http://dx.doi.org/10.1109/LED.2005.862195
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 238056