Avoiding dislocations in ion-implanted silicon

Share/Save/Bookmark

Saris, F.W. and Custer, J.S. and Schreutelkamp, R.J. and Liefting, J.R. and Wijburg, R. and Wallinga, H. (1992) Avoiding dislocations in ion-implanted silicon. Microelectronic Engineering, 19 (1-4). pp. 357-362. ISSN 0167-9317

[img]
Preview
PDF
493Kb
Abstract:Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desirable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications.
Item Type:Article
Copyright:© 1992 Elsevier Science
Research Group:
Link to this item:http://purl.utwente.nl/publications/57478
Official URL:http://dx.doi.org/10.1016/0167-9317(92)90453-X
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page