The application of silicon dioxide as an electret material

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Sprenkels, A.J. and Olthuis, W. and Bergveld, P. (1988) The application of silicon dioxide as an electret material. In: 6th International Symposium on Electrets, ISE, September 1-3, 1988, Oxford, England.

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Abstract:The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-¿m-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions
Item Type:Conference or Workshop Item
Copyright:©1988 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/56112
Official URL:http://dx.doi.org/10.1109/ISE.1988.38543
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