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An electret-based pressure sensitive MOS transistor
Voorthuyzen, J.A. and Bergveld, P. (1988) An electret-based pressure sensitive MOS transistor. In: 6th International Symposium on Electrets, ISE, 1-3 Sept. 1988, Oxford.
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| Abstract: | The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented |
| Item Type: | Conference or Workshop Item |
| Copyright: | ©1988 IEEE |
| Link to this item: | http://purl.utwente.nl/publications/56109 |
| Official URL: | http://dx.doi.org/10.1109/ISE.1988.38634 |
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