An electret-based pressure sensitive MOS transistor

Share/Save/Bookmark

Voorthuyzen, J.A. and Bergveld, P. (1988) An electret-based pressure sensitive MOS transistor. In: 6th International Symposium on Electrets, ISE, 1-3 Sept. 1988, Oxford (pp. pp. 587-591).

open access
[img]
Preview
PDF
219kB
Abstract:The operation of the MOSFET is based on the fact that the lateral conductivity of silicon at the silicon-dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between the metal gate and the oxide, and applying a voltage across the insulator on top of the silicon, the lateral conductivity can become pressure sensitive. The generation of the electric field in the insulator can also be provided by means of an electret. The theory, realization, and performance of an integrated electret-MOSFET-based pressure sensor are presented
Item Type:Conference or Workshop Item
Copyright:©1988 IEEE
Link to this item:http://purl.utwente.nl/publications/56109
Official URL:http://dx.doi.org/10.1109/ISE.1988.38634
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page