High voltage implanted RESURF p-LDMOS using BICMOS technology

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Zhou, Ming-Jiang and De Bruycker, A. and Van Calster, A. and Witters, J. (1993) High voltage implanted RESURF p-LDMOS using BICMOS technology. In: 51st Annual Device Research Conference, 1993, June 21-23, 1993, Santa Barbara, CA, USA (pp. pp. 120-121).

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Abstract:The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.
Item Type:Conference or Workshop Item
Copyright:© 1993 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/56052
Official URL:http://dx.doi.org/10.1109/DRC.1993.1009607
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