Wet chemical etching mechanism of silicon


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Elwenspoek, M. and Lindberg, U. and Kok, H. and Smith, L. (1994) Wet chemical etching mechanism of silicon. In: IEEE Workshop on Micro Electro Mechanical Systems, MEMS 1994, Oiso, Japan (pp. pp. 223-228).

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Abstract:We review what can be said on wet chemical etching of single crystals from the viewpoint of the science of crystal growth. Starting point is that there are smooth and rough crystal surfaces. The kinetics of smooth faces is controlled by a nucleation barrier that is absent on rough faces. The latter therefore etch faster by orders of magnitude. The analysis of the diamond crystal structure reveals that the {111} face is the only smooth face in this lattice-other faces might be smooth only because of surface reconstruction. In this way we explain the minimum of the etch rate in KOH:H2O in the <001> direction. Two critical predictions concerning the shape of the minimum of the etch rate close to <001> and the transition from isotropic to anisotropic etching in HF:HNO3 based solutions are tested experimentally. The results are in-agreement with the theory
Item Type:Conference or Workshop Item
Copyright:©1994 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/56026
Official URL:http://dx.doi.org/10.1109/MEMSYS.1994.555627
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