Turn-on speed of grounded gate NMOS ESD protection transistors
Meneghesso, G. and Luchies, J.R.M. and Kuper, F.G. and Mouthaan, A.J. (1996) Turn-on speed of grounded gate NMOS ESD protection transistors. In: 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 8-11 October 1996, Enschede, The Netherlands.
|Abstract:||The turn-on speed of nMOS transistors (nMOST) is of paramount
importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a commercial e-beam tester. The method may be used to improve CDM-ESD hardness by investigating the CDM pulse responses within circuit. Furthermore it is shown that the CDM results of various protection layouts can be simulated with a SPICE model.
|Item Type:||Conference or Workshop Item|
|Copyright:||© 1996 IEEE|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/56009|
|Export this item as:||BibTeX|
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