Spontaneous direct bonding of thick silicon nitride

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Sanchez, S. and Gui, C. and Elwenspoek, M. (1997) Spontaneous direct bonding of thick silicon nitride. Journal of Micromechanics and Microengineering, 7 (3). pp. 111-113. ISSN 0960-1317

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Abstract:Wafers with LPCVD silicon-rich nitride layers have been successfully direct bonded to silicon-rich nitride and boron-doped silicon surfaces. A chemical - mechanical polishing treatment was necessary to reduce the surface roughness of the nitride before bonding. The measured surface energies of the room-temperature bond were comparable to values found for Si - Si hydrophilic bonding. A mechanism similar to this bonding is suggested for silicon nitride bonding.
Item Type:Article
Copyright:© Institute of Physics and IOP Publishing Limited 1997
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/55988
Official URL:http://dx.doi.org/10.1088/0960-1317/7/3/007
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